Orientation dependent microwave dielectric properties of ferroelectric Ba[sub 1-x]Sr[sub x]TiO[sub 3] thin films

Seung Eon Moon, C.F.; Eun-Kyoung Kim, C.F.; Min-Hwan Kwak; Han-Cheol Ryu, C.F.; Young-Tae Kim, C.F.; Kwang-Yong Kang; Su-Jae Lee; Won-Jeong Kim, C.F.
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2166
Academic Journal
The effects of anisotropic dielectric properties of ferroelectric Ba[sub 1-x]Sr[sub x]TiO[sub 3] (BST) films on the characteristics of the interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST films with (001), (011), and (111) orientation were epitaxially grown on (001), (011), and (111) MgO substrates, respectively, by the pulsed laser deposition method. The microwave properties of orientation engineered BST films were investigated using interdigital capacitors. The calculated dielectric constant tunability with 40 V dc bias variation and the calculated dielectric quality factor values for IDT capacitors based on (001), (011), and (111) oriented BST films at 9 GHz with no dc bias were about 47%, 55%, 43%, and 12, 14, 21, respectively. © 2003 American Institute of Physics.


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