TITLE

Chemistry and band offsets of HfO[sub 2] thin films for gate insulators

AUTHOR(S)
Oshima, M.; Toyoda, S.; Okumura, T.; Okabayashi, J.; Kumigashira, H.; Ono, K.; Niwa, M.; Usuda, K.; Hirashita, N.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2172
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interfacial chemistry and band offsets of HfO[sub 2] films grown on Si(100) substrates are investigated using high-resolution angle-resolved photoelectron spectroscopy and are correlated with interfacial structures revealed by transmission electron microscope. Hf 4f and O 1s spectra show similar chemical shifts indicating the existence of a double layer structure consisting of a HfO[sub 2], upper layer and a SiO[sub 2]-rich Hf[sub 1-x]Si[sub x]O[sub 2] lower layer. Two types of valence band offsets are clearly determined by a double subtraction method to be 3.0 and 3.8 eV that can be attributed to ΔEv[sup 1] for the upper layer HfO[sub 2]/Si and ΔEv[sup 2] for the lower layer Hf[sub 1-x]Si[sub x]O[sub 2]/Si, respectively. © 2003 American Institute of Physics.
ACCESSION #
10774631

 

Related Articles

  • Electrical properties of HfO[sub 2] deposited via atomic layer deposition using Hf(NO[sub 3])[sub 4] and H[sub 2]O. Conley, J. F.; Ono, Y.; Solanki, R.; Stecker, G.; Zhuang, W. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3508 

    We report on the electrical properties of HfO[sub 2] deposited via atomic layer deposition using Hf(NO[sub 3])[sub 4] precursor for metal/oxide/semiconductor gate dielectric applications. Thin films, with less than 1% variation in accumulation capacitance over a 150 mm wafer, have been deposited...

  • Atomic layer deposition of thin hafnium oxide films using a carbon free precursor. Conley, J. F.; Ono, Y.; Tweet, D. J.; Zhuang, W.; Solanki, R. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p712 

    Thin HfO[sub 2] films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO[sub 3])[sub 4]]. Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray...

  • Erratum: Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films [J. Appl. Phys. 96, 5298 (2004)]. Kukli, Kaupo; Aarik, Jaan; Ritala, Mikko; Uustare, Teet; Sajavaara, Timo; Jun Lu; Sundqvist, Jonas; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p099903 

    Presents a correction to the article "Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films," by Kaupo Kukli et al. in the 2004 issue.

  • Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen. Kukli, Kaupo; Ritala, Mikko; Sundqvist, Jonas; Aarik, Jaan; Lu, Jun; Sajavaara, Timo; Leskelä, Markku; Hårsta, Anders // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5698 

    Polycrystalline monoclinic HfO[SUB2] films were atomic layer deposited on Si(100) substrates by a nonhydrous carbon-free process of HfI[SUB4] and O[SUB2]. The oxygen to hafnium ratio corresponded to the stoichiometric dioxide within the limits of accuracy of ion beam analysis. A 1.5-2.0 nm thick...

  • Investigation of optical damage mechanisms in hafnia and silica thin films using pairs of subnanosecond laser pulses with variable time delay. Chase, L. L.; Hamza, A. V.; Lee, H. W. H. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1204 

    Presents a study that investigated the optical damage mechanisms in hafnia and silica thin films using pairs of subnanosecond laser pulses with variable time delay. Experimental procedures; Measurements and discussion; Conclusions.

  • Electrical and physical properties of HfO[sub 2] films prepared by remote plasma oxidation of Hf metal. Yamamoto, Kazuhiko; Hayashi, Shigenori; Niwa, Masaaki; Asai, Masayuki; Horii, Sadayoshi; Miya, Hironobu // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2229 

    The electrical and physical properties of thin hafnium oxide (HfO[sub 2]) films fabricated by a remote plasma oxidation of a hafnium metal were investigated. The HfO[sub 2] capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of...

  • Dielectric property and thermal stability of HfO[sub 2] on silicon. Lin, Y.-S.; Puthenkovilakam, R.; Chang, J. P. // Applied Physics Letters;9/9/2002, Vol. 81 Issue 11, p2041 

    A stoichiometric, uniform, and amorphous hafnium oxide thin film is deposited by an atomic layer deposition process. The as-deposited hafnium oxide films showed superior electrical properties compared to zirconium oxides, including a dielectric constant of 23, a flatband voltage shift of +0.3 V,...

  • Characterization of Hafnium Oxide Thin Films Prepared By MOCVD. Siew Fong Choy, T.P.; Lim, Vanissa Sei Wei; Gopalakrishan, R.; Trigg, Alastair; Bera, Lakshmi Kanta; Matthew, Shajan; Balasubramanian, N.; Moon-Sig Joo, N.; Byung-Jin Cho, N.; Chia-Ching Yeo, N. // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p176 

    Hafnium oxide thin films deposited by MOCVD were annealed in nitrogen at various temperatures. The as-deposited films and annealed films were characterized using Auger electron spectroscopy (AES), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and transmission electron...

  • Interfacial reaction between chemically vapor-deposited HfO[sub 2] thin films and a HF-cleaned Si substrate during film growth and postannealing. Park, Byoung Keon; Park, Jaehoo; Cho, Moonju; Hwang, Cheol Seong; Oh, Kiyoung; Han, Youngki; Yang, Doo Young // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2368 

    Interfacial reactions between HfO[sub 2] thin films and a Si substrate during thin-film growth and postannealing under a N[sub 2] atmosphere were investigated by high-resolution transmission electron microscopy, Auger electron spectroscopy, and electrical measurements of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics