Magnetic properties of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP

Ohya, Shinobu; Kobayashi, Hideo; Tanaka, Masaaki
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2175
Academic Journal
We have studied magnetic properties of heavily Mn-doped [(In[sub 0.44]Ga[sub 0.56])[sub 0.79]Mn[sub 0.21]]As thin films grown by low-temperature molecular-beam epitaxy on InP substrates. (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 °C. When the thickness of the [(In[sub 0.44]Ga[sub 0.56])[sub 0.79]Mn[sub 0.21]]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction pattern and transmission electron microscopy show no MnAs clustering, indicating that a homogeneous single crystal was grown. Magnetic circular dicroism characterizations, as well as transport and magnetization measurements, indicate that the Curie temperature is 125–130 K. © 2003 American Institute of Physics.


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