TITLE

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

AUTHOR(S)
Chih Hang Tung, Takayuki; Kin Leong Pey, Takayuki; Lei Jun Tang, Takayuki; Radhakirshnan, M.K.; Wen He Lin, M.K.; Palumbo, Felix; Lombardo, Salvatore
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2223
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A physical model has been developed which complies with the experimental observation on the failure mechanism of ultrathin gate oxide breakdown during constant voltage stress. Dynamic equilibrium needs to be established between the percolation conductive path and the dielectric breakdown induced epitaxy (DBIE) formation during gate dielectric breakdown transient. The model is capable of linking the percolation model, soft breakdown, and hard breakdown to the DBIE growth for a variety of stress conditions and gate oxide thickness without involving new empirical parameters. © 2003 American Institute of Physics.
ACCESSION #
10774614

 

Related Articles

  • Gate stack insulator breakdown when the interface layer thickness is scaled toward zero. Suñé, Jordi; Tous, Santi; Miranda, Enrique // Applied Physics Letters;11/22/2010, Vol. 97 Issue 21, p213503 

    To fully profit from the advantages of high-K materials in metal-oxide-semiconductor gate insulator stacks, the reduction in the silicon oxide interfacial layer thickness is being pursued. In the framework of the percolation model, we explore the effects of reducing the interfacial layer...

  • Electrode material dependent breakdown and recovery in advanced high-κ gate stacks. Wu, X.; Pey, K. L.; Zhang, G.; Bai, P.; Li, X.; Liu, W. H.; Raghavan, N. // Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p202903 

    In this paper, the mechanism and physics governing the breakdown and recovery in metal-gated high-κ (MG-HK) dielectric stacks is investigated. Postbreakdown recovery is observed in NiSi and TiN-gated, but not TaN-gated, HfO2-based logic devices in voltage-stress tests. Failure analysis...

  • Study of automatic recovery on the metal nanocrystal-based Al2O3/SiO2 gate stack. Chen, Y. N.; Pey, K. L.; Goh, K. E. J.; Lwin, Z. Z.; Singh, P.; Mahapatra, S. // Applied Physics Letters;2/21/2011, Vol. 98 Issue 8, p083504 

    Automatic recovery of leakage current to its prestress condition was observed after soft breakdown on Ru metal nanocrystal-based Al2O3/SiO2 gate stack. We propose that the high current density induced upon breakdown causes considerable Joule heating in the breakdown percolation path. This...

  • Percolation models for gate oxide breakdown. Stathis, J. H. // Journal of Applied Physics;11/15/1999, Vol. 86 Issue 10, p5757 

    Presents information on a study which used computer calculations of the formation of a percolation path across a finite lattice to model dielectric breakdown. Effect of the electric current in dielectric capacitors or transistors; Results and discussion.

  • Statistical behavior of electrical breakdown in insulating polymers. Wu, Kai; Wang, Yang; Cheng, Yonghong; Dissado, L. A.; Liu, Xiaojun // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p064107 

    A simulation model to investigate the statistical property of electrical breakdown is presented based on the field-assisted percolation model for dielectric breakdown, by expressing the disorder in morphology as randomly distributed trap barriers. The effects of sample area and large defects on...

  • Simulation on the time dependence of breakdown strength in insulating polymers. Wu, Kai; Cheng, Yonghong // Journal of Applied Physics;3/15/2007, Vol. 101 Issue 6, p064113 

    On the basis of the percolation model for electrical breakdown in insulating polymers, a simulation approach was put forward for the process of electrical aging. The deteriorated regions formed by bond scission are expressed as the sites with lower trap barriers, and the local deterioration rate...

  • Injection of holes from the silicon substrate in Ta2O5 films grown on silicon. Novkovski, N.; Atanassova, E. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3142 

    In this paper a compact model for leakage currents of metal/Ta2O5/SiO2/Si structures is presented, considering tunneling and hopping conduction in a SiO2 layer and Poole-Frenkel emission in a Ta2O5 layer. Theoretical calculations fit very well the experimental results obtained on thermally grown...

  • Role of oxygen vacancies in HfO2-based gate stack breakdown. Wu, X.; Migas, D. B.; Li, X.; Bosman, M.; Raghavan, N.; Borisenko, V. E.; Pey, K. L. // Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p172901 

    We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are...

  • Electrical transport characteristics of superconducting MgB2–MgO composite near continuous percolation. Yi Bing Zhang; Di Fan Zhou; Zhen Xing Lv; Zhen Yan Deng; Chuan Bing Cai; Shi Ping Zhou // Journal of Applied Physics;Jul2010, Vol. 107 Issue 12, p123907 

    Superconducting MgB2–MgO composite with about 75% mole concentration of MgO was synthesized in situ by a single-replacement reaction. The resistance versus temperature curve shows that the composite has a high superconducting transition temperature to 38.0 K and metallic transport...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics