TITLE

Electrical and physical properties of HfO[sub 2] films prepared by remote plasma oxidation of Hf metal

AUTHOR(S)
Yamamoto, Kazuhiko; Hayashi, Shigenori; Niwa, Masaaki; Asai, Masayuki; Horii, Sadayoshi; Miya, Hironobu
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2229
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical and physical properties of thin hafnium oxide (HfO[sub 2]) films fabricated by a remote plasma oxidation of a hafnium metal were investigated. The HfO[sub 2] capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65 nm with leakage current density of 2.7 A/cm[sup 2] at the gate bias of V[sub fb]-1 (V). The HfO[sub 2] thickness dependence of the EOT demonstrated that the permittivity of 19 for HfO[sub 2] layer and the interfacial layer thickness of 0.36 nm. X-ray photoelectron spectroscopy study revealed that the oxygen radicals oxidize the Hf metal selectively than Si substrate, leading to an increase of permittivity of HfO[sub 2] with reduced interfacial layer growth. © 2003 American Institute of Physics.
ACCESSION #
10774612

 

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