Oxide-assisted growth and characterization of Ge/SiO[sub x] nanocables

Meng, Xiang-Min; Hu, Jun-Qing; Jiang, Yang; Lee, Chun-Sing; Lee, Shuit-Tong
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2241
Academic Journal
Germanium/SiO[sub x] nanocables were prepared via simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5%H[sub 2] as the carrier gases. The product was characterized by scanning electron microscopy, transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy system, and high-resolution TEM. The Ge/SiO[sub x] nanocables had diameters in the range of 60–150 nm and lengths of several tens of micrometers. The growth of the Ge/SiO[sub x] nanocables was considered to occur via the combination of oxide-assisted growth and vapor–liquid–solid processes, and the composition of the nanocables was determined by the relative supply of the Ge and SiO vapors. © 2003 American Institute of Physics.


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