Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects

Ozasa, Kazunari; Aoyagi, Yoshinobu; Yamane, Akihiko; Arai, Yoshio
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2247
Academic Journal
Marked enhancement of photoluminescence of InGaAs/GaAs quantum dots (QDs) was observed by the nanoindentation of the light-collecting fiber nanoprobe onto the sample surface. In order to analyze its mechanism, calculations of the nanoprobe-induced strain and the energy-band profiles in the bulk GaAs surrounding InGaAs QDs have been performed on the bases of linear continuum elastic theory and six-band strain Hamiltonian. The calculations have revealed that the confinement potential for light holes was generated by the nanoprobe indentation. The results obtained in this study show that nanometer-scale strain modulation by nanoprobe indentation has potential for the investigation of semiconductor nanostructure physics. © 2003 American Institute of Physics.


Related Articles

  • Temperature dependence of electronic energy transfer in PbS quantum dot films. Wei Lü; Kamiya, Itaru; Ichida, Masao; Ando, Hiroaki // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083102 

    Colloidal PbS quantum dots dispersed as close-packed film and in polystyrene (PS) matrix are prepared and photoluminescence (PL) spectra are measured in the temperature range of 5–300 K. The integrated PL intensity of the close-packed film increases as the temperature is raised from 5 to...

  • Effects of internal strain and external pressure on electronic structures and optical transitions of self-assembled InxGa1-xAs/GaAs quantum dots: An experimental and theoretical study. Wen, Yuan; Yang, Mou; Xu, S. J.; Qin, L.; Shen, Z. X. // Journal of Applied Physics;Jul2012, Vol. 112 Issue 1, p014301 

    The optical emissive transitions from the ground and excited states of the self-assembled InxGa1-xAs/GaAs quantum dots (QDs) at room temperature were experimentally measured as a function of the external hydrostatic pressure by means of the confocal micro-photoluminescence technique. The ground...

  • Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure. Zhou, P. Y.; Dou, X. M.; Wu, X. F.; Ding, K.; Luo, S.; Yang, T.; Zhu, H. J.; Jiang, D. S.; Sun, B. Q. // Journal of Applied Physics;2014, Vol. 116 Issue 2, p023510-1 

    We report an experimental study on the optical properties of the self-organized 1.55-μm InAs/ InGaAsP/InP quantum dots (QDs) under hydrostatic pressure up to 9.5 GPa at 10 K. The obtained pressure coefficients of emissions from InGaAsP to InAs QDs are 92 meV/GPa and 76 meV/GPa, respectively....

  • Pressure Effect on Si Quantum-Dot Potential. Al-Douri, Y.; Hashim, U.; Ahmed, N. M.; Sauli, Z. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p11 

    Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are...

  • Room-Temperature Photoluminescence at 1.55μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates. Odnoblyudov, V. A.; Egorov, A. Yu.; Kryzhanovskaya, N. V.; Gladyshev, A. G.; Mamutin, V. V.; Tsatsul’nikov, A. F.; Ustinov, V. M. // Technical Physics Letters;Nov2002, Vol. 28 Issue 11, p964 

    Room-temperature photoluminescence (PL) at 1.55 µm from heterostructures with InAs/InGaAsN quantum dots (QDs) grown by MBE on GaAs substrates is demonstrated for the first time. The effect of nitrogen incorporated into InAs/InGaAsN QDs on the PL wavelength and intensity was studied. The...

  • Strong enhancement of the photoluminescence efficiency from InAs quantum dots. Zhao, Q. X.; Willander, M.; Wang, S. M.; Wei, Y. Q.; Sadeghi, M.; Yang, J. H. // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1533 

    InAs quantum dots (QDs) have been investigated using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the InAs layer and the GaAs cap layer, the intensity of the...

  • Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction–diffusion kinetics. Zhang, M. L.; March, N. H.; Peeters, A.; Van Alsenoy, C.; Howard, I.; Lamoen, D.; Leys, F. // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1525 

    When a nylon-plasticizer complex is unstable or if the initial concentration of a plasticizer is higher than the equilibrium concentration at the corresponding temperature and pressure, the plasticizer molecules will dissociate with the amides of nylon and diffuse in the nylon matrix. In the...

  • Observation of confinement-dependent exciton binding energy of GaN quantum dots. Ramvall, Peter; Tanaka, Satoru; Nomura, Shintaro; Riblet, Philippe; Aoyagi, Yoshinobu // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    The photoluminescence emission peak energy of GaN quantum dots was observed to shift to higher energy with decreasing quantum dot size. This effect was found to be a combination of a blueshift from the confinement-induced shift of the electronic levels and a redshift from the increased Coulomb...

  • Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in... Phillips, J.; Bhattacharya, P. // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1549 

    Studies pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAIAs/GaAs quantum dots. Observation of three distinct regions of quantum-dot peak-energy shift; Reduction in photoluminescence linewidth.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics