TITLE

Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects

AUTHOR(S)
Ozasa, Kazunari; Aoyagi, Yoshinobu; Yamane, Akihiko; Arai, Yoshio
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2247
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Marked enhancement of photoluminescence of InGaAs/GaAs quantum dots (QDs) was observed by the nanoindentation of the light-collecting fiber nanoprobe onto the sample surface. In order to analyze its mechanism, calculations of the nanoprobe-induced strain and the energy-band profiles in the bulk GaAs surrounding InGaAs QDs have been performed on the bases of linear continuum elastic theory and six-band strain Hamiltonian. The calculations have revealed that the confinement potential for light holes was generated by the nanoprobe indentation. The results obtained in this study show that nanometer-scale strain modulation by nanoprobe indentation has potential for the investigation of semiconductor nanostructure physics. © 2003 American Institute of Physics.
ACCESSION #
10774606

 

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