Carrier–carrier interaction in single In[sub 0.5]Ga[sub 0.5]As quantum dots at room temperature investigated by near-field scanning optical microscope

Matsuda, K.; Ikeda, K.; Saiki, T.; Saito, H.; Nishi, K.
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2250
Academic Journal
We describe carrier–carrier interaction in self-assembled In[sub 0.5]Ga[sub 0.5]As quantum dots (QDs) at room temperature. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density are investigated through near-field single quantum dot photoluminescence spectroscopy. From the viewpoint of excitation density dependent spectral broadening of the ground state emission, we discuss the dephasing process in QDs due to Coulomb interaction. © 2003 American Institute of Physics.


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