Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Irokawa, Y.; Luo, B.; Kim, Jihyun; LaRoche, J.R.; Ren, F.; Baik, K.H.; Pearton, S.J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.; Park, S.S.; Park, Y.J.
September 2003
Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2271
Academic Journal
p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, V[sub F] was ∼5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance (R[sub ON]) was ∼5 mΩ cm[sup 2] at 300 K, with an ideality factor of ∼2 and activation energy for low forward current density of ∼1.6 eV. This is consistent with carrier recombination in the space charge region via a midgap deep level. The figure-of-merit, V[sub B][sup 2]/R[sub ON], where V[sub B] is the reverse breakdown voltage, was 0.32 MW cm[sup -2]. The reverse recovery time was ≤600 ns at 300 K. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers show the advantages of employing a GaN substrate to make a true vertical transport geometry device. © 2003 American Institute of Physics.


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