Field-effect-induced midinfrared electroluminescence of a quantum-wire-cascade structure by remote δ-doping

Schmult, Stefan; Keck, Ingo; Herrle, Thomas; Wegscheider, Werner; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1909
Academic Journal
We present a quantum-cascade emitter in the galliumarsenide/aluminum–galliumarsenide (GaAs/AlGaAs) heterosystem whose emission properties are controlled by an additional electric field perpendicular to the transport direction. In our case, the additional field is established by remote δ-silicon doping, which is also responsible for charge carrier supply. The field originating from the δ-doping gives rise to an in-plane confinement creating a quantum-wire cascade. This field-effect quantum-cascade emitter is realized using the cleaved edge overgrowth method. Radiative electronic transitions between discrete energy levels in coupled quantum wires were calculated for such a structure. Without an additional electric field, no significant transport is observed. With a field applied, midinfrared emission is observed at a peak wave number of 1200 cm-1 with a full width at half maximum of 300 cm-1 for a heat-sink temperature of 20 K. The presented sample is an experimental proposal for a unipolar quantum-wire intersubband laser. © 2003 American Institute of Physics.


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