Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

Green, R.P.; Krysa, A.; Roberts, J.S.; Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Ng, W.H.; Cockburn, J.W.
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1921
Academic Journal
We report the room-temperature operation of λ≈8.5 μm InGaAs/AlInAs quantum cascade lasers, grown by low-pressure metalorganic vapor phase epitaxy. The necessary control of interfacial abruptness and layer thicknesses was achieved by the use of individually purged vent/run valves and a growth rate of 0.8 μm/h for the active region. Low-temperature threshold current densities of ∼1.5 kA cm[sup -2] and a maximum operating temperature of 290 K have been measured in pulsed operation. These values are comparable with those reported for structures of a similar design grown using molecular beam epitaxy. © 2003 American Institute of Physics.


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