Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

Ono, Takahito; Wang, Dong F.; Esashi, Masayoshi
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1950
Academic Journal
The nanomechanical properties of single-crystalline silicon cantilevers as resonating elements are investigated in ultra-high vacuum. Flash heating the single-crystalline silicon cantilever at 1000 °C in ultra-high vacuum dramatically reduced the mechanical energy dissipation of the oscillating cantilever due to the removal of contaminants and natural oxide and reconstruction of the silicon surface. However, the reconstructed silicon surface is not stable and mechanical properties change depending on the surface state. The Q-factor and influence of gas adsorption on ultrathin single crystalline silicon resonators having (100) and (111)-oriented surfaces are presented. © 2003 American Institute of Physics.


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