TITLE

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

AUTHOR(S)
O'Neill, J.P.; Ross, I.M.; Cullis, A.G.; Wang, T.; Parbrook, P.J.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1965
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a study of the morphology and composition of In[sub x]Ga[sub 1-x]N/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron microscopy. Microstructural analysis was performed to investigate the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100 pA/cm[sup 2], was found to induce significant nanoclustering of indium within the multiple-quantum wells. These findings highlight the need for caution when reporting the presence of indium-rich clusters within InGaN/GaN multiple-quantum wells studied in the transmission electron microscope. © 2003 American Institute of Physics.
ACCESSION #
10719134

 

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