X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Okojie, Robert S.; Holzheu, Thomas; XianRong Huang; Dudley, Michael
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1971
Academic Journal
High-resolution x-ray diffractometry was used to measure the lattice mismatch and misorientation in n-type 4H-SiC epilayers grown homoepitaxially on p-type 4H-SiC as function of different nitrogen doping levels. The spatially averaged lattice mismatch increased from 1.0×10[sup -5] to 4.0×10[sup -5], 6.3×10[sup -5], 8.8×10[sup -5], and 11.6×10[sup -5] in epilayers doped 4.1×10[sup 17] cm[sup -3], 2.6×10[sup 18] cm[sup -3], 1.7×10[sup 19] cm[sup -3], 2.2×10[sup 19], and 4×10[sup 19], respectively. The resolved multiple subsidiary peaks in the rocking curve of the epilayers doped 2.2×10[sup 19] and 4×10[sup 19] cm[sup -3] are likely due to high density of domain boundaries. The increase in mismatch with doping, is attributed to the substitutional nitrogen incorporated preferentially in the host carbon sites of the 4H-SiC epilayer. © 2003 American Institute of Physics.


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