Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

Bundesmann, C.; Ashkenov, N.; Schubert, M.; Spemann, D.; Butz, T.; Kaidashev, E.M.; Lorenz, M.; Grundmann, M.
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1974
Academic Journal
Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm[sup -1], recently assigned to N incorporation [A. Kaschner et al., Appl. Phys. Lett. 80, 1909 (2002)], were observed for Fe, Sb, and Al doped films, intentionally grown without N. The mode at 277 cm[sup -1] occurs also for Ga doped films. These modes thus cannot be related directly to N incorporation. Instead, we suggest host lattice defects as their origin. Further additional modes at 531, 631, and 720 cm[sup -1] seem specific for the Sb, Ga, and Fe dopants, respectively. Li doped ZnO did not reveal additional modes. © 2003 American Institute of Physics.


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