Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films

Park, J.-H.; Kim, J.H.; Kim, Y.; Lee, B.-T.; Jang, S.-J.; Moon, C.-K.; Song, H.-J.
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1989
Academic Journal
Single-crystalline 3C-SiC heteroepitaxial layers were grown on silicon-on-insulator (SOI) and Si wafers, to investigate effects of SOI substrates on the film quality. Residual stress measurement using a laser scan method and the Raman scattering spectroscopy indicated that internal stress within SiC films on SOI were indeed reduced, when compared with that of SiC films on Si. © 2003 American Institute of Physics.


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