TITLE

1.55 μm emission from GaInNAs with indium-induced increase of N concentration

AUTHOR(S)
Zhou, W.; Uesugi, K.; Suemune, I.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1992
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaInNAs/GaAs multiple quantum well (MQW) structures were grown by metalorganic molecular-beam epitaxy (MOMBE). Increase of the N concentration in GaInNAs with increasing In concentration was observed. This trend of enhanced N incorporation for the higher In concentration made it possible to realize long-wavelength emission of 1.55 μm from a GaInNAs/GaAs MQW grown by MOMBE. This result is compared with the previous reports on the growth of GaInNAs alloys and the main factors which lead to the enhanced N incorporation are discussed. © 2003 American Institute of Physics.
ACCESSION #
10719125

 

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