TITLE

Behavior of hydrogen in high dielectric constant oxide gate insulators

AUTHOR(S)
Peacock, P.W.; Robertson, J.; Ca, Engineering Department
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2025
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interstitial hydrogen is calculated to act as a shallow donor in the candidate high dielectric constant (k) gate oxides ZrO[sub 2], HfO[sub 2], La[sub 2]O[sub 3], Y[sub 2]O[sub 3], TiO[sub 2], SrTiO[sub 3], and LaAlO[sub 3] but is deep in the oxides SiO[sub 2], Al[sub 2]O[sub 3], ZrSiO[sub 4], HfSiO[sub 4], and SrZrO[sub 3]. This may account for the change of sign of fixed charge in oxides, from negative in Al[sub 2]O[sub 3] to positive in HfO[sub 2]. © 2003 American Institute of Physics.
ACCESSION #
10719114

 

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