Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope

Jianwei Zhao; Kohei Uosaki
September 2003
Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2034
Academic Journal
The dielectric properties of alkyl monolayers with various chain lengths [CH[sub 3](CH[sub 2])[sub n-1]- (n=12, 14, 16, and 18)] covalently bonded to a hydrogen terminated n-type silicon (111) surface in a nanoscale region were evaluated using current sensing atomic force microscopy (AFM). A reliable electrical contact between the alkyl monolayers and the metal-coated AFM tip was achieved under slight stress. At a force less than 2 nN, current sharply increased as the bias was scanned over a critical value, showing that breakdown took place. The breakdown voltage linearly depended on the chain length of the alkyl monolayers and the dielectric strength of 2.0 GV/m was derived from the slope of this relation. © 2003 American Institute of Physics.


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