Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate

Qiu, Yueming; Uhi, David; Chacon, Rebecca; Yang, Rui Q.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1704
Academic Journal
Single-stack InAs self-assembled quantum-dot (QD) lasers based on (001) InP substrates have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous-wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 μm. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was observed. Lasing spectra at different temperatures suggests that the ground states and the excited states almost overlap, and form a quasicontinuous band due to the large size of the InAs dots and their inhomogeneous broadening. These results will provide guidance for further development of long wavelength InAs QD lasers based on InP substrates. © 2003 American Institute of Physics.


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