Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs

Mikulics, M.; Marso, M.; Kordoš, P.; Stanček, S.; Kováč, P.; Zheng, X.; Wu, S.; Sobolewski, Roman
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1719
Academic Journal
We have fabricated and tested metal–semiconductor–metal (MSM) photodetectors based on nitrogen-ion-implanted GaAs. Nitrogen ions with energy of 700 and 880 keV, respectively, were implanted into epitaxial GaAs films at an ion concentration of 3×10[sup 12] cm[sup -2]. Ti/Au MSM photodetectors with 1-μm-wide fingers were fabricated on top of the implanted GaAs. In comparison to low-temperature-grown GaAs photodetectors, produced in parallel in identical MSM geometry, the 880 keV N[sup +]-implanted photodetectors exhibited almost two orders of magnitude lower dark current (10 nA at 1 V bias) and the responsivity more than doubled (>20 mA/W at 20 V bias). Illumination with 100-fs-wide, 810 nm wavelength laser pulses, generated ∼2.5-ps-wide photoresponse signals with amplitudes as high as 2 V. The 2.5 ps relaxation time was the same for both the ion-implanted and low-temperature-grown devices and was limited by the MSM capacitance time constant. © 2003 American Institute of Physics.


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