Mechanical characterization of trilayer thin films by the microbridge testing method

Wei-hua Xu; Tong-Yi Zhang
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1731
Academic Journal
Microbridge tests were conducted on two sets of trilayer samples, consisting of SiO[sub 2]/Si[sub 3]N[sub 4]/SiO[sub 2] and Si[sub 3]N[sub 4]/SiO[sub 2]/Si[sub 3]N[sub 4], which were fabricated on 4 in. p-type (100) silicon wafers by means of the microelectromechanical fabrication technique. The experimental results were analyzed using the small deformation formula including substrate deformation. By changing the sample length, we determined the bending stiffness and the resultant residual force per unit width in each of the trilayer thin films. A simplification is proposed to estimate residual stress and Young’s modulus in each layer. Young’s moduli and residual stresses are estimated to be 54.59 GPa and -429.49 MPa for the silicon oxide films and 270.54 GPa and 550.75 MPa for the silicon nitride films, respectively. The microbridge testing method enables us to characterize the mechanical properties of each layer of sandwich-structured thin films. © 2003 American Institute of Physics.


Related Articles

  • Detection of a piezoelectric effect in thin films of thermally grown SiO2 via lock-in ellipsometry. Lazovski, Guy; Wachtel, Ellen; Lubomirsky, Igor // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p262905 

    We report the observation of structural piezoelectricity in partially ordered thin films of thermally grown silicon dioxide (SiO2). The piezoelectric coefficient was determined to be 0.14-0.26 pm/V, and the piezoelectricity was found to originate in a layer with thickness at least 3.5 nm. This...

  • Growth stresses and viscosity of thermal oxides on silicon and polysilicon. Kahn, H.; Jing, N.; Huh, M.; Heuer, A. H. // Journal of Materials Research;Jan2006, Vol. 21 Issue 1, p209 

    Stresses in thermally grown SiO2 films on silicon have traditionally been determined by substrate curvature measurements. This technique is useful for studying stresses in thin films, but it cannot be used to investigate stresses generated in the substrate during film growth. In the present...

  • Key micromechanical property determined for thin films.  // Advanced Materials & Processes;Apr2008, Vol. 166 Issue 4, p14 

    The article reports on the development of a new method which determines the Young's modulus of thin films for Micro-Electro-Mechanical Systems (MEMS) devices and for semiconductor devices in integrated circuits. This new method has reportedly been developed at the National Institute of Standards...

  • Wafer-level microelectromechanical system structural material test by electrical signal before pull-in. Hu, Yuh-Chung; Huang, Po-Yuan // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121908 

    The letter develops a wafer-level testing method to examine Young’s modulus and residual stress of structural material of capacitive microdevice by measuring the pre-pull-in capacitance variation of the microtest beam made of the material to be tested. The required instrument is only a...

  • Linear viscoelasticity in aluminum thin films. Seungmin Hyun; Hooghan, Tejpal K.; Brown, Walter L.; Vinci, Richard P. // Applied Physics Letters;8/8/2005, Vol. 87 Issue 6, p061902 

    We have found that thin aluminum films at room temperature exhibit changes in elastic modulus of 25% or more over periods of an hour under stress by using a novel capacitance bulge system. Furthermore, we have strong evidence that this change is due to linear viscoelasticity. Such large changes...

  • A facility for characterizing the dynamic mechanical behavior of thin membranes for microelectromechanical systems. Hall, J. D.; Apperson, N. E.; Crozier, B. T.; Xu, C.; Richards, R. F.; Bahr, D. F.; Richards, C. D. // Review of Scientific Instruments;May2002, Vol. 73 Issue 5, p2067 

    A bulge testing system capable of applying static and dynamic loads to thin film membranes is described. The bulge tester consists of a sealed cavity, filled with a fluid, bounded on the bottom by a circular stainless steel diaphragm and on the top by the thin film membrane of interest. An...

  • Growth of SnO[sub 2] films on micromachined hotplates. Cavicchi, R.E.; Suehle, J.S. // Applied Physics Letters;2/13/1995, Vol. 66 Issue 7, p812 

    Describes the use of a four-element array of micro-hotplates for the growth and thermal processing of thin films. Control of individual element temperature by addressing an element with a specified current; Use of post-deposition heating in vacuum for altering the stoichiometry of films; Effect...

  • A single asperity study of Au/Au electrical contacts. Tringe, J. W.; Uhlman, T. A.; Oliver, A. C.; Houston, J. E. // Journal of Applied Physics;4/15/2003, Vol. 93 Issue 8, p4661 

    Interfacial force microscopy (IFM) is used to measure the electrical contact properties of electroplated gold thin films of the type used in microelectromechanical system relays. Force and current levels consistent with those present in metal-metal contact switches are examined in an...

  • The effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films. Bao, Tien-I; I, Lin // Journal of Applied Physics;12/1/1995, Vol. 78 Issue 11, p6852 

    Presents a study that examined the effect of post deposition low energy plasma bombardment on the ultra thin hydrogenated silicon oxide films. Method of the study; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics