TITLE

Isotopically enriched designer-diamond anvil

AUTHOR(S)
Baker, Paul A.; Vohraa, Yogesh K.; Peterson, Randolph S.; Weir, Samuel T.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1734
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Isotopically enriched (42 at. % [sup 13]C) designer-diamond anvils were grown by microwave plasma chemical vapor deposition using methane/hydrogen/oxygen chemistry. These isotopically enriched diamond layers can modify the thermal properties of the culet of high-pressure anvils and also allow the use of a [sup 13]C/[sup 12]C Raman pressure sensor system for high-pressure, high-temperature measurements. Raman spectroscopy clearly revealed the isotopically mixed nature of the culet while the photoluminescence spectra at 80 K demonstrate the nitrogen-based defect center near the culet of the diamond anvil. The ability to isotopically modify the diamond culets offers yet another functionality for the embedded electric and magnetic sensors in a designer-diamond anvil. © 2003 American Institute of Physics.
ACCESSION #
10665038

 

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