Temperature dependent spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu[sub 2]SiO[sub 5]

van der Koik, F.; Basun, S. A.; Imbusch, G. F.; Yen, W. M.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1740
Academic Journal
Electron delocalization processes of optically excited states of Ce[sup 3+] impurities in Lu[sub 2]SiO[sub 5] were investigated by means of a temperature and spectrally resolved photoconductivity study. By monitoring separately the strength of the photocurrent resulting from excitation into each of the Ce[sup 3+] 5d absorption bands, over a broad temperature region, three different delocalization processes, namely direct photoionization, thermal ionization, and tunneling, have been identified. The relative probabilities and temperature dependencies of each of these processes are discussed. The observed exponential temperature increase in the photocurrent, which spans six orders of magnitude, allows for the exact placement of the lowest energy 5d levels of the Ce[sup 3+] ions within the band gap. For Lu[sub 2]SiO[sub 5]:Ce[sup 3+], the lowest 5d state is determined to be 0.45 eV below the conduction band edge. © 2003 American Institute of Physics.


Related Articles

  • Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells. Rumyantsev, V.; Ikonnikov, A.; Antonov, A.; Morozov, S.; Zholudev, M.; Spirin, K.; Gavrilenko, V.; Dvoretskii, S.; Mikhailov, N. // Semiconductors;Nov2013, Vol. 47 Issue 11, p1438 

    The spectra and relaxation kinetics of interband photoconductivity are investigated in narrow-gap HgCdTe epitaxial films with x = 0.19-0.23 and in structures with HgCdTe-based quantum wells (QWs), having an interband-transition energy in the range of 30-90 meV, grown by molecular-beam epitaxy on...

  • Large band gaps in two-dimensional phononic crystals with neck structures. Yu, Kunpeng; Chen, Tianning; Wang, Xiaopeng // Journal of Applied Physics;Apr2013, Vol. 113 Issue 13, p134901 

    In this paper, we study the band gap properties of a two-dimensional phononic crystal composed of periodic cylinders embedded in a homogenous matrix. The cylinders are not connected with the matrix directly but linked with it through the neck structures constituted by part of a circle. The...

  • Strong-Coupling Features in YB6 and ZrB12 Studied by Point-Contact Spectroscopy. Girovský, J.; Szabó, P.; Mori, T.; Samuely, P. // Acta Physica Polonica, A.;Nov2010, Vol. 118 Issue 5, p1042 

    Point-contact spectroscopy studies of the superconducting energy gap and the electron-phonon coupling mechanism are performed on the boron rich YB6 and ZrB12 single crystals. The obtained values of the superconducting energy gaps suggest the strong coupling with 2 Δp/kB Tc ≈ 4.2 for...

  • Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches. Markelz, A. G.; Heilweil, E. J. // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    The temperature dependence of the terahertz (THz) output power and spectra from biased photoconductive switches was measured for several antenna gap widths and applied biases. The spectrally integrated THz output had a nonmonotonic temperature dependence in all cases with the value increasing by...

  • Electrical characterization of subbands in the HgCdTe surface layer. Gui, Y.S.; Zheng, G.Z.; Chu, J. H.; Guo, S. L.; Zhang, X. C.; Tang, D. Y.; Cai, Yi // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p5000 

    Focuses on the alloy semiconductor Hg1-x Cdx Te for the fabrication of high performance photoconductive detectors in the 3-5 and 8-14 mu m spectral ranges. Computation of subband dispersion relations as a function of the surface electron concentration in the accumulation layers of n-Hg1-x Cdx...

  • Photoconductivity spectra of CdGa2Se4:Co2+ single crystals. Kim, Chang-Dae; Cho, Tong-San; Kim, Jae-Kuen; Kim, Wha-Tek; Kim, Hyun-Nam // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5469 

    Reports on the temperature dependence of the photoconductivity spectra of CdGa[sub2]Se[sub4]:Co² single crystals in the temperature range 22-288 K. Information on the temperature dependence of the peaks of the photoconductivity spectra.

  • Observation of the 4f 3dσ transition of the ArH molecule. Plowlan, Caroline R.; Tokaryk, Dennis W.; Watson, James K.G. // Canadian Journal of Physics;Feb2001, Vol. 79 Issue 2, p189 

    The emission spectrum of ArH contains a band near 10 110 cm[sup –1] that appears to be the analogue of the 3dσ – 4p, v = 0 – 0, band of ArD, observed and analysed near 10 230 cm[sup –1] . However, previous attempts to assign the rotational structure of this band of...

  • Photo- and Thermally Induced Optical Absorption and Photoconductivity of Sillenite Crystals. Panchenko, T. V. // Physics of the Solid State;Apr2000, Vol. 42 Issue 4, p657 

    A study is reported of photo- and thermally induced changes in the optical absorption and photoconductivity spectra of Bi[sub 12]SiO[sub 20] crystals in the 0.5-3.5 eV spectral interval, and of the temperature dependence of optical absorption for temperatures from 80 to 600 K. An analysis is...

  • Kinetics of slow buildup of photoconductance in n-type 6H-SiC. Evwaraye, A.O.; Smith, S.R. // Applied Physics Letters;5/15/1995, Vol. 66 Issue 20, p2691 

    Examines the slow buildup of photoconductance in n-type silicon carbide (SiC). Use of optical admittance spectroscopy; Range of background doping for nitrogen doped SiC specimen; Excitation of photogenerated carriers from the defect levels.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics