Discontinuous tracks in relaxed Si[sub 0.5]Ge[sub 0.5] alloy layers: A velocity effect

Gaiduk, P. I.; Larsen, A. Nylandsted; Hansen, J. Lundsgaard; Trautmann, C.; Toulemonde, M.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1746
Academic Journal
Strain-relaxed crystalline Si[sub 0.5]Ge[sub 0.5] layers were irradiated with U ions of various energies (0.8–2.64 GeV) but of approximately identical electronic stopping power. Transmission electron microscopy reveals tracks of different morphology depending on the velocity of the projectiles. For decreasing beam energy, individual dotted defect structures form aligned discontinuous tracks including a large number of dislocation loops. No indication for track amorphization is found. © 2003 American Institute of Physics.


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