TITLE

Discontinuous tracks in relaxed Si[sub 0.5]Ge[sub 0.5] alloy layers: A velocity effect

AUTHOR(S)
Gaiduk, P. I.; Larsen, A. Nylandsted; Hansen, J. Lundsgaard; Trautmann, C.; Toulemonde, M.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1746
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strain-relaxed crystalline Si[sub 0.5]Ge[sub 0.5] layers were irradiated with U ions of various energies (0.8–2.64 GeV) but of approximately identical electronic stopping power. Transmission electron microscopy reveals tracks of different morphology depending on the velocity of the projectiles. For decreasing beam energy, individual dotted defect structures form aligned discontinuous tracks including a large number of dislocation loops. No indication for track amorphization is found. © 2003 American Institute of Physics.
ACCESSION #
10665034

 

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