Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces

Wang, Z. M.; Shultz, J. L.; Salamo, G. J.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1749
Academic Journal
Molecular-beam-epitaxy growth of strained (In,Ga)As on GaAs vicinal (100) surfaces is investigated by scanning tunneling microscopy. Surface roughing as the consequence of step bunching driven by strain is explored. By tuning the In content over the range from 0.05 to 0.2, the step bunching is observed to exhibit considerable uniformity and order. These results experimentally demonstrate that strain-driven step bunching is a viable approach to provide templates for nanostructure growth. © 2003 American Institute of Physics.


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