Field-effect transistor on SrTiO[sub 3] with sputtered Al[sub 2]O[sub 3] gate insulator

Ueno, K.; Inoue, I. H.; Akoh, H.; Kawasaki, M.; Tokura, Y.; Takagi, H.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1755
Academic Journal
A field-effect transistor has been constructed that employs a perovskite-type SrTiO[sub 3] single crystal as the semiconducting channel. This device functions as an n-type accumulation-mode device. The device was fabricated at room temperature by sputter-deposition of amorphous Al[sub 2]O[sub 3] films as a gate insulator on the SrTiO[sub 3] substrate. The field-effect (FE) mobility is 0.1 cm[sup 2]/V s and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV. © 2003 American Institute of Physics.


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