TITLE

Indication of hysteresis in AlMnN

AUTHOR(S)
Frazier, R.; Thaler, G.; Overberg, M.; Gila, B.; Abernathy, C. R.; Pearton, S. J.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1758
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlN films grown by gas-source molecular beam epitaxy were doped with different levels of Mn during growth. High resolution x-ray diffraction characterization revealed good crystallinity in single phase material, with lattice constant decreasing with increasing Mn concentration. Single phase AlMnN was found to be p type while AlMnN/AlMn mixed phase material was found to be highly conductive n type. Magnetization measurements performed with a superconducting quantum interference device magnetometer indicated ferromagnetism in single phase material persisting to 300 K and showed no evidence of room temperature magnetization in multiphase material. In particular, it was shown that Mn[sub 4]N second phases are not contributing to the magnetization in the AlMnN under optimized growth conditions. © 2003 American Institute of Physics.
ACCESSION #
10665030

 

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