TITLE

Spin lifetimes of electrons injected into GaAs and GaN

AUTHOR(S)
Krishnamurthya, Srinivasan; van Schilfgaarde, Mark; Newman, Nathan
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1761
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spin relaxation times of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot–Yafet, D’yakonov–Perel, and Bir–Aronov–Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature dependence of the spin relaxation lifetime agrees well with measured values in GaAs. We further show that the spin lifetimes decrease rapidly with injected electron energy and reach a local maximum at the longitudinal optical phonon energy. Our calculation predicts that electron spin lifetime in pure GaN is about three orders of magnitude longer than in GaAs at all temperatures, primarily as a result of the lower spin-orbit interaction and higher conduction band density of states. © 2003 American Institute of Physics.
ACCESSION #
10665029

 

Related Articles

  • Hot phonon effect in Dyakonov-Perel spin relaxation: Ehrenreich's variational approach. Idrish Miah, M. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p113704 

    The hot phonon effect in spin relaxation of drifting electrons in the zinc-blende semiconductor GaAs was investigated. Temperature- and doping-density dependent spin relaxations caused by polar optical phonon (POP) scattering were studied. Ehrenreich's variational approach was used to include...

  • Resonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=0.1%). Tan, P. H.; Xu, Z. Y.; Luo, X. D.; Ge, W. K.; Zhang, Y.; Mascarenhas, A.; Xin, H. P.; Tu, C. W. // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p101912 

    Resonant Raman scattering has been applied to a dilute GaAs1-xNx alloy with 0.1% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously....

  • Temperature Dependence of Photoluminescence Peak Energy in Ga(In)NAs. Emura, Shuichi; Nakamoto, Hiroki; Ishikawa, Fumitaro; Kondow, Masahiko; Asahi, Hajime // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p41 

    Introducing normal coordinate system, theoretical approach to band gap alteration with temperature is described. The derived expression is applied to a GaNAs system having the nitrogen composition of about 1.4%. It is found that the band gap narrowing in this system is originated in the...

  • The influence of heating of two-level systems on low-temperature nuclear spin-lattice relaxation. Giorgadze, N.P.; Zakharov, L.Zh. // Low Temperature Physics;Dec98, Vol. 24 Issue 12, p875 

    Investigates the influence of heating of resonant phonons on low-temperature nuclear spin-lattice relaxation (NSLR). Interaction between nuclear spin system and two-level systems; Occurrence of the phonon bottleneck effect; Description of the NSLR process.

  • Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates. Yang, J.W.; Kuznia, J.N. // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3759 

    Demonstrates the feasibility of temperature-mediated phase selection during growth of gallium nitride (GaN) on (111) A and (111) B gallium arsenide substrates. Correlation between growth temperature and GaN(zinc blende)-to-GaN(wurtzite) transition; Use of cross-sectional electron microscopy;...

  • Specific Features of the Nonequilibrium Distribution Function for Electron Scattering by Polar Optical Phonons in III�V Semiconductors. Borisenko, S. I. // Semiconductors;Mar2001, Vol. 35 Issue 3, p298 

    Numerical analysis of a nonequilibrium distribution function for electron scattering by polar optical phonons in a GaAs semiconductor is carried out. The Boltzmann equation for the nonequilibrium function was solved by the iteration method, with allowance made for electron distribution over the...

  • Lateral localization of optical phonons in GaAs quantum islands. Efremov, M. D.; Volodin, V. A.; Preobrazhenskiı, V. V.; Semyagin, B. R.; Sachkov, V. A.; Bolotov, V. V.; Galaktionov, E. A.; Kretinin, A. V. // JETP Letters;7/25/99, Vol. 70 Issue 2, p75 

    Lateral localization of phonons in GaAs islands formed on the (100) surface under conditions of (2 × 4) structural reconstruction is detected by means of Raman scattering. The triplet structure of the peak corresponding to laterally localized phonons is detected in the Raman scattering...

  • On the low-temperature nuclear spin-lattice relaxation in amorphous materials. Zakharov, L. Zh.; Lepsveridze, R. L. // Low Temperature Physics;May2000, Vol. 26 Issue 5 

    A study is made of the mechanism of nuclear magnetic relaxation due to the indirect interaction of the nuclear spins with two-level systems. The sources of this indirect interaction are the hyperfine interaction of the nuclear spins with the electron spin and the interaction of the electron...

  • Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces. MICZEK, MARCIN; ADAMOWICZ, BOGUSLAWA; HASHIZUME, TAMOTSU; HASEGAWA, HIDEKI // Optica Applicata;2005, Vol. 35 Issue 3, p355 

    The influence of surface state density NSS and bulk non-radiative lifetime t on room temperature photoluminescence quantum efficiency YPL and surface photovoltage (SPV) versus the excitation light intensity F was studied theoretically for GaAs and wurtzite GaN using self-consistent computer...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics