TITLE

Piezoelectric, electro-optical, and photoelastic effects in In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells

AUTHOR(S)
Chen, C. H.; Chen, W. H.; Chen, Y. F.; Lin, T.Y.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present microphotoluminescence (PL) and micro-Raman measurements with varying the applied electric field in In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells (MQWs). The InGaN A[sub 1](LO) phonon was found to show a redshift in frequency with the increase of applied electric field. And, a blueshift in PL spectra has been observed when the applied electric field was increased. Quite interestingly, the change in the refractive index was also observed, which was determined accurately from the interference pattern shown in the emission spectra. This finding correlates very well with the blueshift of PL spectra and the redshift of the InGaN A[sub 1](LO) phonon. Based on the stress change induced by the compensation between piezoelectric and external fields, our results firmly establish that strong electro-optical and photoelastic effects do exist in In[sub x]Ga[sub 1-x]N/GaN MQWs, which is important in the design of optoelectronic devices. © 2003 American Institute of Physics.
ACCESSION #
10665026

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics