Rectifying electrical characteristics of La[sub 0.7]Sr[sub 0.3]MnO[sub 3]/ZnO heterostructure

Tiwari, Ashutosh; Jin, C.; Kumar, D.; Narayan, J.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1773
Academic Journal
We have fabricated a p–n junction, consisting of p-type manganite (La[sub 0.7]Sr[sub 0.3]MnO[sub 3]) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20–300 K. Electrical characteristics of La[sub 0.7]Sr[sub 0.3]MnO[sub 3] (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified. © 2003 American Institute of Physics.


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