Doping dependent NH[sub 3] sensing of indium oxide nanowires

Daihua Zhang; Chao Li; Xiaolei Liu; Song Han; Tao Tang; Chongwu Zhou
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1845
Academic Journal
NH[sub 3] gas sensing properties of In[sub 2]O[sub 3] nanowires were carefully studied. Change of conductance in opposite directions was observed with different nanowire sensors. We suggest that this differential response is caused by various doping concentrations in the semiconducting In[sub 2]O[sub 3] nanowires. In addition, we have also investigated a “gate-screening effect” exhibited in our nanowire chemical sensors at high NH[sub 3] concentrations, which is induced by adsorbed NH[sub 3] molecules working as charge traps. Both the doping-dependent response and the gate-screening effect will be especially valuable and helpful for understanding the detailed sensing mechanism of semiconducting metal oxide materials. © 2003 American Institute of Physics.


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