Good rectifying characteristic in p–n junctions composed of La[sub 0.67]Ca[sub 0.33]MnO[sub 3-δ]/Nb–0.7 wt %-doped SrTiO[sub 3]

Hu, F X.; Gao, J.; Sun, J. R.; Shen, B. G.
September 2003
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1869
Academic Journal
Simple p–n junctions have been fabricated using a simple heteroepitaxial structure of La[sub 0.67]Ca[sub 0.33]MnO[sub 3-δ]/Nb-doped SrTiO[sub 3]. In such junctions, the La[sub 0.67]Ca[sub 0.33]MnO[sub 3-δ] exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO[sub 3] shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature. © 2003 American Institute of Physics.


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