TITLE

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

AUTHOR(S)
Song, A. M.; Missous, M.; Omling, P.; Peaker, A. R.; Samuelson, L.; Seifert, W.
PUB. DATE
September 2003
SOURCE
Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1881
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By tailoring the boundary of a narrow semiconductor channel to break its symmetry, we have realized a type of nanometer-scale nonlinear device, which we refer to as self-switching device (SSD). An applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel depending on the sign of V. This results in a diode-like characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually zero to more than 10 V, by simply adjusting the channel width. The planar and two-terminal structure of the SSD also allows SSD-based circuits to be realized by only one step of lithography. © 2003 American Institute of Physics.
ACCESSION #
10664989

 

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