Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy

Haskell, B.A.; Wu, F.; Matsuda, S.; Craven, M.D.; Fini, P.T.; DenBaars, S.P.; Speck, J.S.; Shuji Nakamura, J.S.
August 2003
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1554
Academic Journal
This letter discusses the structural and morphological characteristics of planar, nonpolar (1120) a-plane GaN films grown on (1102) r-plane sapphire by hydride vapor phase epitaxy. Specular films with thicknesses over 50 μm were grown, eliminating the severely faceted surfaces that have previously been observed for hydride vapor phase epitaxy-grown a-plane films. Internal cracks and crack healing, similar to that in c-plane GaN films, were observed. Atomic force microscopy revealed nanometer-scale pitting and steps on the film surfaces, with rms roughness of ∼2 nm. X-ray diffraction confirmed the films are solely a-plane oriented with on-axis (1120) and 30° off-axis (1010) rocking curve peak widths of 1040 and 3000 arcsec, respectively. Transmission electron microscopy revealed a typical basal plane stacking fault density of 4×10[sup 5] cm[sup -1]. The dislocation content of the films consisted of predominately edge component (b[sub edge]=±[0001]) threading dislocations with a density of 2×10[sup 10] cm[sup -2], and mixed-character Shockley partial dislocations (b=1/3<1100>) with a density of 7×10[sup 9] cm[sup -2]. © 2003 American Institute of Physics.


Related Articles

  • Understanding x-ray diffraction of nonpolar gallium nitride films. Moram, M. A.; Johnston, C. F.; Hollander, J. L.; Kappers, M. J.; Humphreys, C. J. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 11, p113501-1 

    X-ray diffraction (XRD) is widely used for the rapid evaluation of the structural quality of thin films. In order to determine how defect densities relate to XRD data, we investigated a series of heteroepitaxial nonpolar a-plane GaN films with different densities of dislocations and basal plane...

  • Compositional modulation and optical emission in AlGaN epitaxial films. Gao, Min; Bradley, S. T.; Cao, Yu; Jena, D.; Lin, Y.; Ringel, S. A.; Hwang, J.; Schaff, W. J.; Brillson, L. J. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p103512 

    Compositional, structural, and optical properties of molecular-beam epitaxy grown AlxGa1-xN films were characterized by transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence spectroscopy. Spontaneous modulation, phase separation, and band gap reductions were observed...

  • Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers. Tomiya, S.; Funato, K.; Asatsuma, T.; Hino, T.; Kijima, S.; Asano, T.; Ikeda, M. // Applied Physics Letters;7/31/2000, Vol. 77 Issue 5 

    We have investigated the dependence of crystallographic tilt and defect distribution on mask material in metalorganic chemical vapor deposition grown GaN layers formed utilizing an epitaxial lateral overgrowth (ELO) technique using x-ray diffraction and transmission electron microscopy....

  • Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates. Meng Wei; Xiaoliang Wang; Xu Pan; Hongling Xiao; Cuimei Wang; Cuibai Yang; Zhanguo Wang // Journal of Materials Science: Materials in Electronics;Aug2011, Vol. 22 Issue 8, p1028 

    Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the...

  • Effect of implantation temperature on the blistering behavior of hydrogen implanted GaN. Dadwal, U.; Scholz, R.; Reiche, M.; Kumar, P.; Chandra, S.; Singh, R. // Applied Physics A: Materials Science & Processing;Aug2013, Vol. 112 Issue 2, p451 

    GaN epitaxial layers were implanted by 100 keV H ions at different implantation temperatures (LN, RT and 300 °C) with a fluence of 2.5×10 cm. The implanted samples were characterized using Nomarski optical microscopy, AFM, XRD, and TEM. Topographical investigations of the implanted...

  • Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study. Kaminska, A.; Strak, P.; Borysiuk, J.; Sobczak, K.; Domagala, J. Z.; Beeler, M.; Grzanka, E.; Sakowski, K.; Krukowski, S.; Monroy, E. // Journal of Applied Physics;1/7/2016, Vol. 119 Issue 1, p015703-1 

    The results of comprehensive theoretical and experimental study of binary GaN/AlN multi-quantum well (MQW) systems oriented along polar c-direction of their wurtzite structure are presented. A series of structures with quantum wells and barriers of various thicknesses were grown by...

  • High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy. Gerlach, J. W.; Hofmann, A.; Höche, T.; Frost, F.; Rauschenbach, B.; Benndorf, G. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p011902 

    GaN(1100) thin films are deposited on γ-LiAlO2(100) by low-energy-ion-beam-assisted molecular-beam epitaxy. Structural properties of the epitaxial GaN films are investigated by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. X-ray diffraction measurements...

  • Epitaxial lateral overgrowth of [formula] semipolar GaN on [formula] m-plane sapphire by metalorganic chemical vapor deposition. Ni, X.; Özgür, Ü.; Baski, A. A.; Morkoç, H.; Zhou, Lin; Smith, David J.; Tran, C. A. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p182109 

    The authors report the growth of semipolar [formula] GaN films on nominally on-axis [formula] m-plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (1122) GaN orientation. Moreover,...

  • Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers. Guo, W.; Katz, M. B.; Nelson, C. T.; Heeg, T.; Schlom, D. G.; Liu, B.; Che, Y.; Pan, X. Q. // Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122107 

    Epitaxial (0001) ZnO films were grown on (111) Si substrates using epitaxial (111) Sc2O3 buffer layers. The quality of the ZnO epilayers is manifested by a Hall mobility of 77 cm2/V s at room temperature, x-ray diffraction rocking curve full widths at half maximum of 300–400 arc sec, and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics