Room temperature formation of half-metallic Fe[sub 3]O[sub 4] thin films for the application of spintronic devices

Jin Pyo Hong; Sung Bok Lee, V.V.; Young Woo Jung, V.V.; Jong Hyun Lee; Kap Soo Yoon, V.V.; Ki Woong Kim, V.V.; Chae Ok Kim; Chang Hyo Lee, V.V.; Myoung Hwa Jung, V.V.
August 2003
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1590
Academic Journal
Half-metallic Fe[sub 3]O[sub 4] films were prepared at room temperature using a rf sputtering system specially integrated with an external rf source. Primary emphasis was placed on obtaining a large amount of active oxygen radicals through an external electrode for efficient deposition. The insertion of an external electrode was found to be critical for room temperature growth of Fe[sub 3]O[sub 4] thin films. The structural and electrical properties gave shift and broadening effects to the Verwey temperature at various powers. The magnetization could only be saturated when a 300 Oe field was applied along an easy axis of magnetization during growth. However, there was no sign of saturation up to 5 T under zero-field growth. © 2003 American Institute of Physics.


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