TITLE

Spectroscopic ellipsometry study of epitaxially grown Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]–PbTiO[sub 3]/MgO/TiN/Si heterostructures

AUTHOR(S)
Tsang, W.S.; Chan, K.Y.; Mak, C.L.; Wong, K.H.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1599
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
0.65Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]–0.35PbTiO[sub 3] (PMN–PT) thin films have been grown on MgO/TiN-buffered Si(001) substrates using pulsed laser deposition. Their structural properties and surface morphology were examined by x-ray diffraction and scanning electron microscopy, respectively. All PMN–PT films grown at 670 °C show a cube-on-cube epitaxial relationship of PMN–PT(100)∥MgO(100)∥TiN(100)∥Si(100). Discernable interfaces between layers in the heterostructures and crack-free surfaces are evident. A spectroscopic ellipsometer was used to study the optical characteristics of the films. It was revealed that the refractive index of the PMN–PT is ∼2.50 as measured at 635 nm. This value is only slightly less than that of the PMN–PT single crystal of 2.60. Our results suggest that the PMN–PT/MgO/TiN/Si heterostructure has an excellent potential for use in integrated optical waveguide devices. © 2003 American Institute of Physics.
ACCESSION #
10603825

 

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