Dielectric and piezoelectric properties of relaxor Pb(Sc[sub 1/2]Nb[sub 1/2])O[sub 3] thin films

Kuh, B.J.; Choo, W.K.; Brinkman, K.; Damjanovic, D.; Setter, N.
August 2003
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1614
Academic Journal
Pure perovskite Pb(Sc[sub 1/2]Nb[sub 1/2])O[sub 3] thin films without pyrochlore phase were prepared by the sol–gel method on TiO[sub 2]/Pt/TiO[sub 2]/SiO[sub 2]/Si substrates. Films exhibited (111) preferred orientation and columnar microstructure. Diffuse phase transitions with permittivity maximum decreasing in value and shifting toward higher temperature with increasing frequency and slim polarization-electric field hysteresis loops typical for relaxors were observed. The maximum field-induced piezoelectric d[sub 33] coefficient measured with ac electric field of 14 kV/cm was 58 pm/V. The d[sub 33]–dc electric field relation is virtually hysteresis free. © 2003 American Institute of Physics.


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