Universal description of channel conductivity for nanotube and nanowire transistors

Rotkin, S.V.; Ruda, H.E.; Shik, A.
August 2003
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1623
Academic Journal
A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowire charge density distribution. © 2003 American Institute of Physics.


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