Field electron emission from nanostructured heterogeneous HfN[sub x]O[sub y] films

Liao, M.Y.; Gotoh, Y.; Tsuji, H.; Ishikawa, J.
August 2003
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1626
Academic Journal
Nanostructured heterogeneous HfN[sub x]O[sub y] films comprising of nanoscale conductive hafnium nitride grains embedded in a matrix of dielectric oxide or oxynitride were deposited on silicon substrate by magnetron sputtering at room temperature. Electron emission with low threshold field 25 V/μm and good current stability were reported. The field emission characteristics depend on the concentration of hafnium nitride phase, revealing the nature of heterogeneous structure. Field enhancement in HfN[sub x]O[sub y] film was explained in terms of the interaction between the conductive grains separated by dielectric layers under external electric field. The experiment is expected to open a group of nanostructured heterogeneous material consisting of stable conductive nitride and insulating oxide for field emitter, and also provide an insight into the emission mechanism of carbon films. © 2003 American Institute of Physics.


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