TITLE

Optical properties of ZnO rods formed by metalorganic chemical vapor deposition

AUTHOR(S)
Zhang, B.P.; Binh, N.T.; Segawa, Y.; Wakatsuki, K.; Usami, N.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1635
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-quality ZnO rods were formed directly on sapphire (0001) substrates by metalorganic chemical vapor deposition. The rods exhibited free exciton and very sharp bound exciton emissions at low temperatures. By increasing the excitation intensity, biexciton emission was observed. Temperature dependence of the emission spectra suggested that the emission peak at ∼3.315 eV, which had been attributed to neutral acceptor-bound exciton emission, is due to donor-acceptor pairs. The acceptor binding energy was determined to be about 107 meV, which agrees well with that estimated from a hydrogen-atom-like acceptor model. © 2003 American Institute of Physics.
ACCESSION #
10603813

 

Related Articles

  • Refractive index dispersion deduced from lasing modes in ZnO microtetrapods. Ursaki, V. V.; Zalamai, V. V.; Tiginyanu, I. M.; Burlacu, A.; Rusu, E. V.; Klingshirn, C. // Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p171101 

    High optical quality, well end leg faceted ZnO microtetrapods sustaining lasing modes with quality factors of 2500–3000 have been grown by carbothermal chemical vapor deposition. It is shown that lasing is due to longitudinal Fabry–Pérot modes in individual tetrapod legs and the...

  • Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films. Meng, Xiangdong; Shi, Zhiming; Chen, Xiaobing; Zeng, Xianghua; Fu, Zhuxi // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023501 

    The present study focuses on the photoluminescence (PL) properties of ZnO films prepared by the reaction of water and zinc. Temperature-dependent PL characteristics of the ZnO films have been investigated in the range from 15 to 260 K. The PL spectrum at 15 K is dominated by neutral donor-bound...

  • ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering. Borysiewicz, M. A.; Pasternak, I.; Dynowska, E.; Jakieła, R.; Kolkovski, V.; Duzynska, A.; Kaminska, E.; Piotrowska, A. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p686 

    ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on...

  • Correlation between exciton-phonon interaction and electrical conductivity for unintentionally-doped ZnO epilayers grown by metal-organic chemical vapor deposition. Lee, Sejoon; Kim, Deuk Young // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093515 

    The correlation between the exciton-phonon interaction and the electrical transport property for the as-grown and annealed ZnO epilayers were investigated. From fitting of the Bose–Einstein approximation using emission parameters extracted from temperature-dependent photoluminescence...

  • Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films. Lu, J. G.; Fujita, S.; Kawaharamura, T.; Nishinaka, H.; Kamada, Y.; Ohshima, T. // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p262107 

    Transparent conducting Al-doped Zn1-xMgxO thin films were grown on glass substrates by chemical vapor deposition. The resistivity could be lowered to 10-3 Ω cm with optical transmittance above 85% in visible regions. The influence of carrier concentration on band-gap shift in Zn1-xMgxO alloys...

  • Luminescence of heteroepitaxial zinc oxide. Bethke, S.; Pan, H.; Wessels, B. W. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p138 

    Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.

  • Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wells. Westland, D. J.; Fox, A. M.; Maciel, A. C.; Ryan, J. F.; Scott, M. D.; Davies, J. I.; Riffat, J. R. // Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p839 

    We report optical absorption and photoluminescence measurements of excitons in Ga0.47In0.53As/InP multiple quantum wells grown by metalorganic chemical vapor deposition. At 4 K the luminescence linewidth for n=1 heavy-hole excitons is measured to be 7 meV for a 30-period structure with wells of...

  • Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Lee, H. C.; Hariz, A.; Dapkus, P. D.; Kost, A.; Kawase, M.; Garmire, E. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1182 

    We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp...

  • Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD. Viswanath, A.K.; Lee, J.I.; Lee, C.R.; Leem, J.Y.; Kim, D. // Applied Physics A: Materials Science & Processing;1998, Vol. 67 Issue 5, p551 

    Abstract. Photoluminescence (PL) properties of the residual shallow donors in GaN epitaxial layers grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) were reported. Well-resolved free exciton transitions and luminescence due to the residual shallow donors were observed. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics