TITLE

Electronic stopping of He, B, N, and Al in SiC

AUTHOR(S)
Zhang, Y.; Weber, W.J.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/25/2003, Vol. 83 Issue 8, p1665
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon carbide (SiC) is a wide-band-gap semiconductor that has attracted extensive investigations for a wide range of device applications. Accurate values of stopping powers in SiC, especially for B, N, and Al ions as dopants and for He ions used in ion-beam analysis applications, are highly desirable. In the present study, the electronic energy loss of these ions in a self-supported SiC film is directly measured in transmission geometry using a time-of-flight detection system over a continuous range of energies. The measured electronic stopping powers are parameterized, for easy implementation in other applications, and compared with the predictions of the stopping and range of ions in matter code. © 2003 American Institute of Physics.
ACCESSION #
10603803

 

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