TITLE

Structural and defect characterization of GaAs and AlxGa1-xAs grown at low temperature by

AUTHOR(S)
Fleischer, S.; Beling, C.D.; Fung, S.; Nieveen, W. R.; Squire, J. E.; Zheng, J. Q.; Missous, M.
PUB. DATE
January 1997
SOURCE
Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p190
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the structure and defect characteristics of gallium-arsenic layers as grown at low temperature by molecular beam epitaxy. Increase in lattice parameter in all As-grown layers; Insignificant effect of aluminum on neutral arsenic antisite defect; Replacement of arsenic by oxygen.
ACCESSION #
105640

 

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