Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers

Jakaboviˆ, J.; Lengyel, O.; Kováĉ, J.; Wong, T. C.; Lee, C. S.; Lee, S. T.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1295
Academic Journal
The optical properties of tris-(8-hydroxyquinoline) aluminum (Alq) doped with 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) in solutions and in solid films were studied by measuring the steady-state excitation and spontaneous emission spectra. The emission peak in the solid films shifted from 628 to 659 nm as the doping concentration of DCM changed from 0.9% to 11%. The optically pumped waveguide lasers were fabricated by coevaporation of Alq films with 1.3 wt % DCM onto gallium arsenide (GaAs) substrates using silicon dioxide (SiO[sub 2]) and magnesium fluoride (MgF[sub 2]) as cladding layers. Both types of waveguide laser structures showed optical confinement and simulated emission at a threshold pumping energy near 1.4 μJ. The result suggests a thin MgF[sub 2] may be used as a confinement layer that has the advantage of preparation by low-temperature evaporation. © 2003 American Institute of Physics.


Related Articles

  • Low-loss Al-free waveguides for unipolar semiconductor lasers. Sirtori, C.; Kruck, P.; Barbieri, S.; Page, H.; Nagle, J.; Beck, M.; Faist, J.; Oesterle, U. // Applied Physics Letters;12/20/1999, Vol. 75 Issue 25, p3911 

    Presents a study that proposed and demonstrated a waveguide design for midinfrared unipolar semiconductor lasers in aluminum (Al) gallium arsenide (GaAs) quantum cascade structures. Active region embedded between the two GaAs layers; Appropriate doping profile that allows optical confinement...

  • Monolithic integration of glass waveguides with semiconductor lasers. Wu, MingCho; Chen, Yung Jui; Fitz, John // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1550 

    Deals with a study which integrated glass waveguides with aluminum gallium arsenide/gallium arsenide lasers. Significance of a low loss optical waveguide in photonic integrated circuits; Composition of the glass waveguide; Source of output powers.

  • Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguide. Ribot, H.; Sansonetti, P.; Brandon, J.; Carre, M.; Menigaux, L.; Azoulay, R.; Bouadma, N. // Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p475 

    Monolithic integration of a quarter-circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45-μm-long straight part and a quarter circle with a curvature radius of 150 μm. The component exhibits a...

  • Negotiating design options requires close cooperation. Soales, Bob // Laser Focus World;Aug2002, Vol. 38 Issue 8, p155 

    Focuses on the negotiation of the myriad of options available for the specification, design and manufacture of thin-film coatings. Application of a quarter-wave magnesium fluoride coating; Disadvantage of V-coatings; Changes of reflection with wavelengths.

  • Sample depolarization effects from thin films of ZnS on GaAs as measured by spectroscopic.... Jellison Jr., G.E.; McCamy, J.W. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p512 

    Examines zinc sulphide (ZnS) thin films grown on gallium arsenide (GaAs) by laser ablation. Determination of the optical functions of the ZnS rough layer; Indication of high refractive index in thin films; Application of thin films as antireflection layers for GaAS solar cells.

  • In situ laser deposition of superconducting YBa2Cu3O7-x thin films on GaAs substrates. Lee, S. Y.; Jia, Q. X.; Anderson, W. A.; Shaw, D. T. // Journal of Applied Physics;12/1/1991, Vol. 70 Issue 11, p7170 

    Presents a study that examined laser deposition of superconducting thin films on gallium arsenide substrates. Method of the study; Results and discussion; Conclusion.

  • The deposition of a GaS epitaxial film on GaAs using an exchange reaction. Xin, Q.-S.; Conrad, S.; Zhu, X.-Y. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1244 

    A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched...

  • Bond-length strain in buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001). Woicik, J. C.; Gupta, J. A.; Watkins, S. P.; Crozier, E. D. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    The bond lengths in a series of strained, buried Ga[sub 1-x]In[sub x]As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external...

  • The anomalous bandgap bowing in GaAsN. Tisch, U.; Finkman, E.; Salzman, J. // Applied Physics Letters;7/15/2002, Vol. 81 Issue 3, p463 

    The composition dependence of the fundamental bandgap of thin, pseudomorphic GaAs[sub 1-x]N[sub x] layers (0≤x≤5%) on GaAs substrates is studied by optical transmission measurements and high resolution x-ray diffraction. We present a very large set of consistent experimental data. An...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics