Tunable laser diodes by Stark effect

Le Thomas, N.; Pelekanos, N. T.; Hatzopoulos, Z.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1304
Academic Journal
We demonstrate wavelength tuning of a laser diode (LD) by the quantum-confined Stark effect. This is achieved by introducing tunneling barriers in the LD active region, as a result of which significant space-charge fields are generated during current injection, modulating the gain spectrum of the “lasing” quantum well. In such a “modified” InGaAs/AlGaAs LD, we observed up to 5-nm Stark-tuning of the lasing wavelength in the 900-nm spectral region. © 2003 American Institute of Physics.


Related Articles

  • High-efficiency Stark-geometry photorefractive quantum wells with intrinsic cladding layers. Lahiri, I.; Aguilar, Maria // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p517 

    Compares photorefractive p-i-n diode structures operating in the longitudinal Stark geometry. Introduction of joint image correlators; Use of buffer layers with large defect concentrations in device designs; Occurrence of charge trapping and screening within the quantum wells.

  • Reverse bias tuned multiple quantum well ridge guide laser with uniform frequency modulation.... Huang, X.; Seeds, A.J. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p765 

    Examines the fabrication of a multiple quantum well guide laser tuned by the quantum confined Stark effect. Accounts on the frequency modulation response of the laser; Limitation of the frequency parasitic capacitance; Extension of the response using low parasitic contacting structure.

  • Observation of quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells. Li, Cheng; Yang, Qinqing // Journal of Applied Physics;6/1/2000, Vol. 87 Issue 11, p8195 

    Presents a study which suggested quantum-confined Stark shifts in a type of quantum wells by the bias dependence of the photoccurent electra of a type of photodiodes. Relations between electric fields and quantum wells; Conclusion.

  • Self-electro-optic effect based on anticrossing of excitonic transitions in a coupled quantum well structure. Tokuda, Yasunori; Kanamoto, Kyozo; Tsukada, Noriaki // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p166 

    We demonstrate electrically controlled photocurrent (absorption) tristability in an asymmetric coupled quantum well p-i-n diode connected to a series resistive load. The phenomenon, which is explained in terms of a self-electro-optic effect, is brought about by making use of an anticrossing...

  • Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes. Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2386 

    We demonstrate ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes operating under continuous-wave (cw) conditions. The laser diodes were grown on sapphire substrates by metalorganic chemical vapor deposition. Under pulsed bias conditions, we have achieved threshold current densities as...

  • Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes. Givens, M. E.; Mawst, L. J.; Zmudzinski, C. A.; Emanuel, M. A.; Coleman, J. J. // Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p301 

    The device performance of graded barrier quantum well laser diodes with various buffer layer structures grown by metalorganic chemical vapor deposition has been studied. Devices having four structures (a GaAs buffer layer only, a compositionally graded buffer layer, a superlattice buffer layer,...

  • Gain characteristics of InGaN/GaN quantum well diode lasers. Song, Y.-K.; Kuball, M.; Nurmikko, A. V.; Bulman, G. E.; Doverspike, K.; Sheppard, S. T.; Weeks, T. W.; Leonard, M.; Kong, H. S.; Dieringer, H.; Edmond, J. // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom...

  • Voltage-controlled Q switching of InGaAs/InP single quantum well lasers. Berthold, K.; Levi, A. F. J.; Tanbun-Ek, T.; Logan, R. A.; Chu, S. N. G. // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p1940 

    The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage-controlled tuning of the lasing threshold current over more than one order of...

  • Gain characteristics of strained quantum well lasers. Welch, D. F.; Streifer, W.; Schaus, C. F.; Sun, S.; Gourley, P. L. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p10 

    InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm-1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics