Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N

Kuryatkov, V.; K. Zhu; Borisov, B.; Chandolu, A.; Gherasoiu, Ìu.; Kipshidze, G.; Chu, S. N. G.; Holtz, M.; Kudryavtsev, Yu.; Asomoza, R.; Nikishin, S.; Temkin, H.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1319
Academic Journal
Measurements of acceptor activation energy in p–n junctions based on superlattices of AlN (1.25 nm thick) and Al[sub 0.08]Ga[sub 0.92](In)N (0.5 nm thick), with the average AlN content greater than 0.6, are reported. Structural characteristics of superlattices were determined using transmission electron microscopy and x-ray diffraction. p–n junctions in mesa-etched diodes exhibit low leakage current densities of 3×10[sup -10] A/cm[sup 2] at near zero bias. Acceptor activation energy of 207±10 meV, obtained from the temperature dependence of the forward current, is very similar to that of uniform alloy of Al[sub 0.08]Ga[sub 0.92]N that constitutes the well material. The acceptor activation energy thus appears controlled by the well material and remains low despite high average AlN content and large band gap. © 2003 American Institute of Physics.


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