Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction

Gergaud, P.; Megdiche, M.; Thomas, O.; Chenevier, B.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1334
Academic Journal
In situ real-time measurements of stress are performed during solid-state reaction of a palladium thin film with Si(001) or Si(111) single crystals. The stress in Pd[sub 2]Si is compressive in both cases at variance with the sign of epitaxial misfit. A large difference in stress relaxation kinetics between fiber textured [on Si(001)] and epitaxial [on Si(111)] Pd[sub 2]Si films is evidenced. This difference is correlated with a considerable variation in stress buildup during silicide growth. The microstructure of the growing phase is thus a key parameter for stress development during solid-state reaction. © 2003 American Institute of Physics.


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