TITLE

Enhanced green emission in ZnGa[sub 2]O[sub 4]:Mn thin film phosphors by Se doping

AUTHOR(S)
Jung Hyun Jeong, N.; Byung Kee Moon, N.; Hyo Jun Seo, N.; Jong Seong Bae, N.; Soung-Soo Yi, N.; Ill Won Kim, N.; Hong Lee Park, N.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1346
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mn-doped ZnGa[sub 2]O[sub 4-x]Se[sub x] thin film phosphors have been grown using pulsed-laser ablation under various growth conditions. The structural characterization was carried out on a series of ZnGa[sub 2]O[sub 4-x]Se[sub x]:Mn[sup 2+] films grown on MgO(100) substrates using Zn-rich ceramic targets. Zn-rich ceramic targets have been prepared to compensate the vaporization loss of Zn. The oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The luminescence results indicated that MgO (100) is one of the most promised substrates for the growth of high-quality ZnGa[sub 2]O[sub 4-x]Se[sub x]:Mn[sup 2+] films. In particular, the incorporation of Se into the ZnGa[sub 2]O[sub 4] lattice induced a remarkable increase of photoluminescence. The highest green emission intensity was observed with ZnGa[sub 2]O[sub 3.925]Se[sub 0.075]:Mn[sup 2+] films whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa[sub 2]O[sub 4]:Mn[sup 2+] films. This phosphor may promise for application to the flat panel displays. © 2003 American Institute of Physics.
ACCESSION #
10543243

 

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