Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

Kvit, A.; Yankov, R. A.; Duscher, G.; Rozgonyi, G.; Glasko, J. M.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1367
Academic Journal
We have examined nanovoid formation, Fe gettering, and Fe clustering phenomena occurring in epitaxial silicon layers implanted with MeV Si ions. Insights into these phenomena as a function of depth have been gained from detailed analyses by Z-contrast imaging in conjunction with electron energy-loss spectroscopy. Our work has shown at the nanoscale structural and chemical levels that the defects produced by MeV self-ion implantation between the surface and the ion projected range R[sub p] (i.e., in the so-called R[sub p]/2 region) are voids, which provide extremely efficient and aggressive metallic impurity gettering. It has been proposed that the gettering does not occur via chemisorption or silicidation layering on the internal surface of the void walls, as in the well-known case of helium-induced cavities, but rather proceeds in a mode of metal–metal atom binding in the vicinity of the R[sub p]/2 voids. © 2003 American Institute of Physics.


Related Articles

  • Vibrational electron energy loss spectroscopy of the Si(111)(7×7)–H2O(D2O) system. Nishijima, M.; Edamoto, K.; Kubota, Y.; Tanaka, S.; Onchi, M. // Journal of Chemical Physics;6/1/1986, Vol. 84 Issue 11, p6458 

    High-resolution electron energy loss spectroscopy (EELS) has been applied to the study of the Si(111)(7×7)–H2O(D2O) system. At 300 K, H2O(D2O) is partially dissociated on the Si(111) surface to form the SiOH(SiOD) and SiH(SiD) species. Angle and primary-electron-energy dependences of...

  • Thin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopy. Dori, L.; Bruley, J.; DiMaria, D. J.; Batson, P. E.; Tornello, J.; Arienzo, M. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2317 

    Presents information on a study which developed a process to deposit in situ a dual electron injector structure (DEIS) with SiO[sub2] between two silicon-rich SiO[sub2] layers. Examination by electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope; Discussion on...

  • New opportunities for quantitative analysis as applied to reflected electron energy loss spectroscopy of Fe/Si structures. Parshin, A.; Kushchenkov, S.; Aleksandrova, G.; Ovchinnikov, S. // Technical Physics;May2011, Vol. 56 Issue 5, p656 

    The feasibility of determining the elemental composition, chemical state, and element distribution across the depth in a subsurface region using the computer simulation of the electron inelastic scattering cross section is demonstrated with iron layers on silicon substrates. Analysis is carried...

  • Ion beam syntheses and microstructure studies of a new FeSi2 phase. Jin, S.; Li, X. N.; Zhang, Z.; Dong, C.; Gong, Z. X.; Bender, H.; Ma, T. C. // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3306 

    Deals with a study which determined the formation of iron-silicide by ion implantation of iron into silicon. Methodology of the study; Results and discussion.

  • Reaction of iron and silicon during ion implantation. Crecelius, G.; Radermacher, K.; Dieker, Ch. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p4848 

    Investigates the reaction of iron during ion implantation into silicon at various temperatures and implantation doses. Details of the experiment; Description of the precipitates formed during the implantation process; Information on the iron silicide phases as determined from electron...

  • Electrochemically prepared Si(111) 1X1-H surface.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p397 

    Examines the role of electrochemistry for silicon(111) surfaces preparation. Use of the high resolution electron energy loss spectroscopy; Observation of dark current during electrochemical preparation; Steps of hydrogenation.

  • SiL core edge fine structure in an oxidation series of silicon compounds: A comparison of microelectron energy loss spectra with theory. Skiff, W. M.; Carpenter, R. W.; Lin, S. H. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3463 

    Provides information on a study that obtained single-scattering electron-energy-loss microspectra for the oxidation series of tetrahedrally bonded silicon compounds and amorphous SiO[sub2]. Methodology of the study; Results and discussion on the study.

  • Ultimate resolution electron energy loss spectroscopy at H/Si(100) surfaces. Tautz, F. S.; Schaefer, J. A. // Journal of Applied Physics;12/15/1998, Vol. 84 Issue 12, p6636 

    Details a study which re-investigated the hydrogen covered silicon(100) surface using high resolution electron energy loss spectroscopy. Experimental methods; Results and discussion; Conclusions.

  • In situ electron spectroscopy study of Si surfaces after Ar-ion-assisted Cl2 etching. Aoto, Nahomi; Ikawa, Eiji; Kurogi, Yukinori // Journal of Applied Physics;1/1/1989, Vol. 65 Issue 1, p158 

    Presents a study that examined silicon surfaces after argon-ion-assisted chlorine[sub2] etching with in situ observation methods. Application of low-energy electron energy loss spectroscopy (LEELS) in the analysis; Use of different primary electron energies on LEELS; Presence of two conspicuous...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics