Quasiballistic transport in HgTe quantum-well nanostructures

Daumer, V.; Golombek, I.; Gbordzoe, M.; Novik, E. G.; Hock, V.; Becker, C. R.; Buhmann, H.; Molenkamp, L. W.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1376
Academic Journal
The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 μm. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semiclassical electron trajectories show good agreement with the experiment. © 2003 American Institute of Physics.


Related Articles

  • A new method for solving the ground-state problem in arbitrary quantum wells: Application to electron-hole quasi-bound levels in quantum wells under high electric field. Singh, Jasprit // Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p434 

    A method based on the Monte Carlo technique and variational principle is developed to study the ground-state problem in arbitrary quantum wells. A technique is described to use this method to study quasi-bound states in systems. The method is applied to AlGaAs/GaAs quantum wells subjected to...

  • Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells. Bournel, A.; Dollfus, P.; Cassan, E.; Hesto, P. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    An original approach is developed to investigate the electron spin dynamics in III-V quantum wells using a particle Monte Carlo transport model. We study the spin precession related to the D'yakonov-Perel' mechanism, which is believed to be the predominant spin relaxation phenomenon in...

  • Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells. Titantah, J. T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 8, p084310 

    The modified atomic scattering amplitudes (MASAs) of mixed Ga1-xInxAs, GaAs1-xNx, and InAs1-xNx are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various...

  • Ferromagnetism in fractal-based complexes. Ugajin, Ryuichi // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5772 

    Ferromagnetism in fractal-based complexes, which are generated using the dielectric-breakdown model with appropriate controls of their fractal dimension, is investigated using the standard Monte Carlo simulations. The difference in the fractal dimensions of a nerve-cell-like complex creates a...

  • High-field mobility of light holes in strained quantum wells. Hjalmarson, Harold P. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2215 

    The small mass of light holes in strained quantum wells leads to high mobility at low fields. However, at high fields, the holes become hot and populate the heavy hole band, thereby greatly reducing their mobility. An analysis shows that the high-field mobility primarily depends on Δ, the...

  • Population Inversion between G Subbands in Quantum Wells under the Conditions of G�L Intervalley Transfer. Aleshkin, V. Ya.; Andronov, A. A.; Dubinov, A. A. // Semiconductors;Feb2003, Vol. 37 Issue 2, p215 

    Monte Carlo simulations of electron transport in Al[sub x]Ga[sub 1-x]As/GaAs/In[sub y]Ga[sub 1-y]As double-quantum-well heterostructures in high lateral electric fields are carried out. It is shown that, under the conditions of inter- valley G-L electron transfer, there exists a population...

  • Monte Carlo calculation of the electron capture time in single quantum wells. Abou-Khalil, Michel; Goano, Michele; Reid, Benoit; Champagne, Alain; Maciejko, Roman // Journal of Applied Physics;5/1/1997, Vol. 81 Issue 9, p6438 

    The electron capture time in single quantum wells is calculated by considering capture and escape as scattering events in Monte Carlo simulation. The calculation is performed for an AlGaAs/GaAs quantum well as a function of the well width at 300 K. The overall capture time of carriers is found...

  • Comparison between the Monte Carlo method and the drift-diffusion approximation in... Guclu, A.D.; Maciejko, R. // Journal of Applied Physics;11/1/1998, Vol. 84 Issue 9, p4673 

    Presents a study which examined the differences between the Monte Carlo method and the drift-diffusion equations in quantum well laser simulation. Details on technological developments in crystal growth; Methods used to stimulate electron devices; Use of the Monte Carlo method to solve the...

  • Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach. Singh, Jasprit // Journal of Applied Physics;4/15/1986, Vol. 59 Issue 8, p2953 

    Deals with the application of the Monte Carlo approach to study the quasibond electron and hole ground-state levels in a quantum well. Criteria in the development of the approach; Significance of the Monte Carlo method; Practical computer aspects of quasibond states.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics